ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,439, issued on July 7, was assigned to TEXAS INSTRUMENTS Inc. (Dallas). "Semiconductor devices with selectively doped gate electrode structu... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,440, issued on July 7, was assigned to STMICROELECTRONICS S.r.l. (Agrate Brianza, Italy). "Electronic device with reduced switching oscillat... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,442, issued on July 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Wandon K... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,443, issued on July 7, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Self-aligned substrate isolation (SASI) of gat... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,444, issued on July 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device including amorphous oxide... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,445, issued on July 7, was assigned to Japan Display Inc. (Tokyo). "Semiconductor device" was invented by Hajime Watakabe (Tokyo), Masashi T... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,446, issued on July 7, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan). "Semiconductor device and manufacturing met... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,447, issued on July 7, was assigned to LG Display Co. Ltd. (Seoul, South Korea). "Thin film transistor substrate and display device comprisi... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,448, issued on July 7, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China). "Semiconductor structure and preparation method thereof" w... Read More
ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,449, issued on July 7, was assigned to PANJIT INTERNATIONAL INC. (Kaohsiung, Taiwan). "Semiconductor device and manufacturing method thereof... Read More